Effect of boron nitride defects and charge inhomogeneity on 1/<i>f</i> noise in encapsulated graphene

Low frequency 1/f noise is investigated in graphene, encapsulated between the hexagonal boron nitride (hBN) substrate dual gated geometry. The overall magnitude smaller as compared to graphene on Si/SiO2 substrate. amplitude hole doped region independent of carrier density, while electron region, a pronounced peak observed at Fermi energy, EF?90 meV. physical mechanism anomalous attributed impurity states originating from Carbon atom replacing nitrogen site hBN crystal. Furthermore, study near Dirac point shows characteristic “M-shape,” which found be strongly correlated with charge inhomogeneity point.